Method of forming semiconductor substrate
US10043662B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2012 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | May 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.