Inventor · Valbonne, FR

Jean-Pierre Faurie

21Patents
5h-index
11Co-inventors
62Inventor score

Filing activity: Apr 13, 2001 → Dec 18, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7118929B2 Process for producing an epitaxial layer of gallium nitride Chemistry; Metallurgy 28 Expired
US6657194B2 Multispectral monolithic infrared focal plane array detectors Electricity 22 Expired
US7445673B2 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof Electricity 11 Expired
US9012306B2 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof Electricity 8 Active
US8283239B2 Process for growth of low dislocation density GaN Electricity 6 Active
US7455729B2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density Electricity 4 Expired
US7560296B2 Process for producing an epitalixal layer of galium nitride Electricity 4 Active
US8030101B2 Process for producing an epitaxial layer of galium nitride Electricity 2 Active
US9209018B2 Semiconductor substrate and method of manufacturing Electricity 2 Active
US9312129B2 Group III-V substrate material with particular crystallographic features and methods of making Electricity 1 Active
US8916456B2 Group III-V substrate material with particular crystallographic features Electricity 1 Active
US10043662B2 Method of forming semiconductor substrate Electricity 1 Active
US10181399B2 Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride Electricity 0 Active
US9318314B2 Method of forming a freestanding semiconductor wafer Electricity 0 Active
US9130120B2 Group III-V substrate material with thin buffer layer and methods of making Emerging Cross-Sectional Technologies 0 Active
US8557042B2 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate Emerging Cross-Sectional Technologies 0 Active
US9064685B2 Semiconductor substrate and method of forming Electricity 0 Active
US10497833B2 Semiconductor material including different crystalline orientation zones and related production process Electricity 0 Active
US9882087B2 Semiconductor material including different crystalline orientation zones and related production process Electricity 0 Active
US8921210B2 Semiconductor substrate and method of forming Electricity 0 Active
US11990335B2 N-CO-doped semiconductor substrate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.