Semiconductor device and method for fabricating the same
US10043675B2 · kind B2 · utility
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2References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 22, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jun 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.