Diode device of transient voltage suppressor and manufacturing method thereof
US10043790B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jun 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/041
Abstract
A diode device of a transient voltage suppressor (TVS) is disclosed. The diode device includes a substrate, a first well, a second well, a first electrode and a second electrode. The substrate has a first surface. The first well is formed in the substrate and near the first surface. The second well is formed in the substrate and near the first surface. There is a gap between the first well and the second well. The first electrode is electrically connected with the first well. The second electrode is electrically connected with the second well. A current path is formed from the first electrode, the first well, the substrate, the second well to the second electrode. The current path passes through a plurality of PN junctions to form an equivalent circuit having a plurality of equivalent capacitances coupled in series.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.