UBIQ Semiconductor Corp.
16Patents
16Active
16Granted
46Portfolio score
Filing activity: Mar 8, 2013 → Oct 11, 2018
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10043790B2 | Diode device of transient voltage suppressor and manufacturing method thereof | Electricity | 2 | Active |
| US9741708B2 | Transient voltage suppressor and ESD protection device and array thereof | Electricity | 1 | Active |
| US10438941B2 | Semiconductor apparatus | Electricity | 1 | Active |
| US9350406B1 | Transceiver and operating method thereof | Electricity | 1 | Active |
| US10418442B1 | Trench gate MOSFET | Electricity | 1 | Active |
| US9406795B2 | Trench gate MOSFET | Electricity | 0 | Active |
| US10269945B2 | Power transistor device | Electricity | 0 | Active |
| US8999790B2 | Method of forming a trench gate MOSFET having a thick bottom oxide | Electricity | 0 | Active |
| US9773770B2 | Semiconductor device | Electricity | 0 | Active |
| US8927369B2 | Method of forming a trench gate MOSFET having a thick bottom oxide | Electricity | 0 | Active |
| US9583560B2 | Power semiconductor device of stripe cell geometry | Electricity | 0 | Active |
| US9035283B2 | Trench gate MOSFET | Electricity | 0 | Active |
| US10475792B2 | Power transistor device | Electricity | 0 | Active |
| US10243036B2 | Semiconductor structure and manufacturing method thereof and terminal area structure of semiconductor device | Electricity | 0 | Active |
| US9954355B1 | Transient voltage suppressor apparatus | Electricity | 0 | Active |
| US9531370B1 | Transmitter, common mode transceiver using the same, and operating method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.