TFT backplate structure and manufacture method thereof
US10043829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for manufacturing a thin film transistor (TFT) backplate that includes a switch TFT and a drive TFT. The method is conducted such that each of the switch TFT and the drive TFT manufactured therewith includes a source electrode/a drain electrode and a gate electrode, and also includes an etching stopper layer, a semiconductor layer, and gate isolation layer that are disposed between the source electrode/the drain electrode and the gate electrode to form a TFT structure. The gate isolation layers of the switch TFT and drive TFT are formed of different materials, such as SiOx and Al2O3, or SiOx and SiNx, or Al2O3 and a mixture of SiNx and SiOx, such that electrical properties of the switch TFT and the drive TFT are made different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.