Chihyu Su
26Patents
3h-index
10Co-inventors
52Inventor score
Filing activity: Jul 14, 2014 → Mar 6, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9589995B2 | TFT substrate having three parallel capacitors | Electricity | 7 | Active |
| US9768323B2 | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | Electricity | 4 | Active |
| US9799677B2 | Structure of dual gate oxide semiconductor TFT substrate | Physics | 3 | Active |
| US9768202B2 | TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof | Electricity | 3 | Active |
| US9786695B2 | TFT substrate structure | Electricity | 3 | Active |
| US9634032B2 | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | Electricity | 2 | Active |
| US9876037B2 | Thin-film transistor array substrate and manufacturing method thereof | Electricity | 2 | Active |
| US9748285B2 | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | Electricity | 1 | Active |
| US9768200B2 | TFT backplate structure and manufacture method thereof | Electricity | 1 | Active |
| US9570620B2 | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | Electricity | 1 | Active |
| US9543442B2 | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | Physics | 1 | Active |
| US9773851B2 | OLED display device comprising an insulative layer of varying thickness and manufacturing method thereof | Electricity | 1 | Active |
| US9922995B2 | Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates | Electricity | 1 | Active |
| US9741858B2 | Amorphous silicon semiconductor TFT backboard structure | Electricity | 0 | Active |
| US9704887B2 | TFT substrate structure | Electricity | 0 | Active |
| US9698172B2 | TFT substrate structure | Electricity | 0 | Active |
| US9960195B2 | Method for manufacturing TFT backplane and structure of TFT backplane | Electricity | 0 | Active |
| US9947699B2 | Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof | Electricity | 0 | Active |
| US9601523B2 | Dual gate TFT substrate structure utilizing COA skill | Electricity | 0 | Active |
| US10629745B2 | Manufacturing method and structure of oxide thin film transistor | Electricity | 0 | Active |
| US10109659B2 | TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof | Electricity | 0 | Active |
| US9728560B2 | TFT substrate structure | Electricity | 0 | Active |
| US10991827B2 | Structure of oxide thin film transistor | Electricity | 0 | Active |
| US10373989B2 | Thin-film transistor array substrate and manufacturing method thereof | Electricity | 0 | Active |
| US10043829B2 | TFT backplate structure and manufacture method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.