Thin film semiconductor device

US10043864B2 · kind B2 · utility

Assignee

• TOSHIBA MEMORY CORPORATION · JP

Inventors

• Minoru Oda · Yokkaichi, JP
• Shinji Mori · Yokohama, JP
• Kiwamu Sakuma · Yokkaichi, JP
• Masumi Saitoh · Yokkaichi, JP

Key dates

• Filing date: Jul 29, 2016
• Grant date: Aug 7, 2018
• Expiry date: Jul 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/40

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a first electrode. The third semiconductor layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode opposes the third semiconductor layer. An orientation ratio of the third semiconductor layer is higher than an orientation ratio of the first semiconductor layer.