Rare earth nitride and group III-nitride structure or device
US10043871B1 · kind B1 · utility
1Cited by
1References
19Claims
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Key dates
| Filing date | Apr 6, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Apr 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structure or device comprises a AlxGa1-xN or InyGa1-yN layer or substrate, a rare earth nitride epitaxial layer, and an AlzGa1-zN epitaxial interlayer between the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate. The interlayer is in direct contact with the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.