Stéphane Vezian
5Patents
1h-index
8Co-inventors
36Inventor score
Filing activity: Mar 31, 2015 → Jun 6, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10043871B1 | Rare earth nitride and group III-nitride structure or device | Electricity | 1 | Active |
| US10415153B2 | Doped rare earth nitride materials and devices comprising same | Electricity | 0 | Active |
| US12342661B2 | Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure | Electricity | 0 | Active |
| US11085130B2 | Method for producing nanostructures | Chemistry; Metallurgy | 0 | Active |
| US10347483B2 | Rare earth nitride structure or device and fabrication method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.