Semiconductor devices utilizing capping layers with multiple widths and methods of manufacturing the same
US10043879B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jul 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.