Avalanche diode, and a process of manufacturing an avalanche diode
US10043936B1 · kind B1 · utility
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1References
42Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 27, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
Abstract
The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of an anode and the cathode of the avalanche photodiode. A second dopant implant in the active area forming the other one of the anode and the cathode of the avalanche photodiode, wherein at least one of the first and second dopant implants defines a discontinuous formation having at least one interruption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.