MEMS structure with improved shielding and method
US10046964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2014 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jun 11, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.