Wafer level package of MEMS sensor and method for manufacturing the same
US10048286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Aug 18, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0118
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A MEMS sensor and a manufacturing method thereof is provided: forming a lower electrode layer wherein a metal is deposited on a portion of a lower glass substrate; forming a structural layer by etching according to a pattern which is formed on an upper surface of a silicon wafer and then further etching to the same thickness as the metal which is formed on a portion of the lower electrode layer; anodic bonding the structural layer to an upper portion of the lower electrode layer formed; forming a sensing part in the structural layer by etching according to a pattern which is formed on an opposite surface of the structural layer which is not etched; and forming an upper electrode layer by depositing a metal on an upper wafer and eutectic bonding the upper electrode layer to the structural layer on which the sensing part is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.