MRAM dry etching residue removal composition, method of producing magnetoresistive random access memory, and cobalt removal composition
US10049883B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Apr 26, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.