Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same
US10049936B2 · kind B2 · utility
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20References
20Claims
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Key dates
| Filing date | May 15, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | May 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
Abstract
A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a substrate, two semiconductor fins over the substrate, and a semiconductor feature over the two semiconductor fins. The semiconductor feature comprises two lower portions and one upper portion. The two lower portions are directly over the two semiconductor fins respectively. The upper portion is over the two lower portions. A bottom surface of the upper portion has an arc-like cross-sectional shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.