Inventor · Baoshan, TW

Jeng-Wei Yu

21Patents
2h-index
22Co-inventors
57Inventor score

Filing activity: Sep 19, 2003 → Feb 19, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8409892B2 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates Electricity 5 Active
US11101347B2 Confined source/drain epitaxy regions and method forming same Electricity 4 Active
US10546784B2 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Electricity 2 Active
US11948971B2 Confined source/drain epitaxy regions and method forming same Electricity 1 Active
US8809832B1 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure Electricity 1 Active
US11037826B2 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Electricity 1 Active
US11908742B2 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Electricity 0 Active
US8871546B2 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure Electricity 0 Active
US7001784B2 Method to control spacer width Electricity 0 Expired
US12068395B2 Method for forming an undoped region under a source/drain Electricity 0 Active
US8487325B2 Light emitting diode with large viewing angle and fabricating method thereof Electricity 0 Active
US12363993B2 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Electricity 0 Active
US11652105B2 Epitaxy regions with large landing areas for contact plugs Electricity 0 Active
US12389649B2 Transistors with stacked semiconductor layers as channels Electricity 0 Active
US8679883B2 Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure Electricity 0 Active
US12094778B2 Fin field-effect transistor device and method of forming Electricity 0 Active
US11257908B2 Transistors with stacked semiconductor layers as channels Electricity 0 Active
US12057450B2 Epitaxy regions with large landing areas for contact plugs Electricity 0 Active
US8481353B2 Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation Electricity 0 Active
US10879128B2 Semiconductor device and method of forming same Electricity 0 Active
US10049936B2 Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.