Semiconductor isolation structure with air gaps in deep trenches
US10049941B2 · kind B2 · utility
2Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.