Through via structure, semiconductor device and manufacturing method thereof
US10049981B2 · kind B2 · utility
1Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through via structure includes a semiconductor substrate, an underlying insulation layer, a conductive via and a sidewall insulation layer. The underlying insulation layer is over the semiconductor substrate. The conductive via is through the semiconductor substrate and the underlying insulation layer. The sidewall insulation layer is between the semiconductor substrate and the conductive via. The sidewall insulation layer includes a protrusion proximal to an interface between the semiconductor substrate and the underlying insulation layer, and protruding outwardly into the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.