Hsing-Chih Lin
65Patents
4h-index
38Co-inventors
62Inventor score
Filing activity: Dec 13, 2013 → Jul 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10157946B2 | Method for forming CMOS image sensor structure | Electricity | 6 | Active |
| US10629592B2 | Through silicon via design for stacking integrated circuits | Electricity | 6 | Active |
| US9263437B2 | Mechanisms for forming metal-insulator-metal (MIM) capacitor structure | Electricity | 5 | Active |
| US10510592B2 | Integrated circuit (IC) structure for high performance and functional density | Electricity | 4 | Active |
| US9818779B2 | CMOS image sensor structure | Electricity | 4 | Active |
| US10964692B2 | Through silicon via design for stacking integrated circuits | Electricity | 3 | Active |
| US11063038B2 | Through silicon via design for stacking integrated circuits | Electricity | 3 | Active |
| US9246084B2 | RRAM cell including V-shaped structure | Electricity | 2 | Active |
| US10916502B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Active |
| US9257486B2 | RRAM array having lateral RRAM cells and vertical conducting structures | Electricity | 2 | Active |
| US10504784B2 | Inductor structure for integrated circuit | Electricity | 2 | Active |
| US11282769B2 | Oversized via as through-substrate-via (TSV) stop layer | Electricity | 2 | Active |
| US11195818B2 | Backside contact for thermal displacement in a multi-wafer stacked integrated circuit | Electricity | 2 | Active |
| US10163878B2 | Semiconductor structure and method for manufacturing the same | Electricity | 2 | Active |
| US11791332B2 | Stacked semiconductor device and method | Electricity | 1 | Active |
| US10049981B2 | Through via structure, semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US10727205B2 | Hybrid bonding technology for stacking integrated circuits | Electricity | 1 | Active |
| US11942368B2 | Through silicon vias and methods of fabricating thereof | Electricity | 1 | Active |
| US9620553B2 | CMOS image sensor structure with crosstalk improvement | Electricity | 1 | Active |
| US10811398B2 | Semiconductor structure and method for manufacturing the same | Electricity | 1 | Active |
| US11410972B2 | Hybrid bonding technology for stacking integrated circuits | Electricity | 1 | Active |
| US11177302B2 | CMOS image sensor structure with microstructures formed on semiconductor layer | Electricity | 1 | Active |
| US11322481B2 | Hybrid bonding technology for stacking integrated circuits | Electricity | 1 | Active |
| US11404534B2 | Backside capacitor techniques | Electricity | 1 | Active |
| US11756862B2 | Oversized via as through-substrate-via (TSV) stop layer | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.