Semiconductor device and method of fabricating the same
US10049997B2 · kind B2 · utility
2Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Feb 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pad is disposed on a substrate. A bump structure is disposed on the pad and electrically connected to the pad. The bump structure includes a first copper layer and a second copper layer sequentially stacked on the pad and a solder ball on the second copper layer. A first X-ray diffraction (XRD) peak intensity ratio of (111) plane to (200) plane of the first copper layer is greater than a second XRD peak intensity ratio of (111) plane to (200) plane of the second copper layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.