Carbon and fluorine concentration of electrodes for a semiconductor device
US10050053B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 2, 2015 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Oct 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
Abstract
According to one embodiment, a semiconductor device includes a substrate and a multilayer body provided on the substrate. The multilayer body has electrode films and insulating films. The electrode films contain silicon, the insulating films contain silicon oxide. Each of the electrode films and each of the insulating films are alternately stacked. A hole is formed in the multilayer body, and the hole vertically extends in the multilayer body. The electrode films include a first electrode film and a second electrode film located below the first electrode film. Carbon concentration of the first electrode film is higher than carbon concentration of the second electrode film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.