Method of forming semiconductor structures including metal insulator metal capacitor
US10050103B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | May 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.