Low static current semiconductor device
US10050621B2 · kind B2 · utility
8Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Sep 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a power transistor and a driving circuit. The driving circuit is coupled to and is configured to drive the power transistor and includes first and second stages. The second stage is coupled between the first stage and the power transistor. Each of the first and second stages includes a pair of enhancement-mode high-electron-mobility transistors (HEMTs). The construction as such lowers a static current of the driving circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.