Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications

US10053775B2 · kind B2 · utility

Assignees

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• American Air Liquide, Inc. · US

Inventors

• Glenn Kuchenbeiser · Newark, US
• Venkateswara R. Pallem · Hockessin, US
• Nicolas Blasco · Grenoble, FR
• Jean-Marc Girard · Versailles, FR

Key dates

• Filing date: Dec 30, 2015
• Grant date: Aug 21, 2018
• Expiry date: Jul 30, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/18
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods of using Si-containing film forming compositions to deposit silicon-containing films using vapor deposition processes are disclosed. The disclosed Si-containing film forming composition comprises an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4−x−y wherein x=0, 1 or 2; y=1, 2 or 3; x+y<4; each R1 and R2 is independently selected from C1-C6 alkyl, aryl, or hetero group; and R1 and R2 may be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions include an amino(bromo)silane precursor selected from the group consisting of SiH2Br(NEt2), SiH2Br(N(iPr)2), SiH2Br(N(iBu)2) and SiBr(NMe2)3.