Managing threshold voltage shift in nonvolatile memory
US10056139B2 · kind B2 · utility
1Cited by
2References
19Claims
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Key dates
| Filing date | Jul 10, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Jul 10, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0069
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus, systems, and methods to correct for threshold voltage drift in non-volatile memory devices are disclosed and described. In one example, a compensated demarcation voltage is generated by either a time-based drift compensation scheme or a disturb-based drift compensation scheme, and read and write operations to the non-volatile memory are carried out using the compensated voltage threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.