Inventor · Cameron Park, CA, US

Doyle Rivers

33Patents
6h-index
24Co-inventors
65Inventor score

Filing activity: May 3, 2007 → Nov 3, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9142271B1 Reference architecture in a cross-point memory Physics 20 Active
US8732557B2 Data protection across multiple memory blocks Physics 15 Active
US9298545B2 Data protection across multiple memory blocks Physics 10 Active
US8203876B2 Reducing effects of erase disturb in a memory device Physics 9 Active
US8767487B2 Drain select gate voltage management Physics 8 Active
US9030906B2 Isolating, at least in part, local row or column circuitry of memory cell before establishing voltage differential to permit reading of cell Physics 7 Active
US10088880B2 Thermal monitoring of memory resources Physics 6 Active
US9136873B2 Reduced uncorrectable memory errors Electricity 6 Active
US7656709B2 NAND step up voltage switching method Physics 5 Active
US9747978B2 Reference architecture in a cross-point memory Physics 5 Active
US9477616B2 Devices, systems, and methods of reducing chip select Physics 4 Active
US10678315B2 Thermal monitoring of memory resources Physics 4 Active
US10324793B2 Reduced uncorrectable memory errors Electricity 3 Active
US8565018B2 Reducing effects of erase disturb in a memory device Physics 2 Active
US9996496B2 Devices, systems, and methods of reducing chip select Physics 2 Active
US9785603B2 Devices, systems, and methods of reducing chip select Physics 2 Active
US9747977B2 Methods and systems for verifying cell programming in phase change memory Physics 2 Active
US9721657B1 Managing threshold voltage shift in nonvolatile memory Physics 2 Active
US8111555B2 NAND step voltage switching method Physics 1 Active
US8730736B2 NAND step up voltage switching method Physics 1 Active
US8441860B2 NAND step up voltage switching method Physics 1 Active
US9934088B2 Reduced uncorrectable memory errors Electricity 1 Active
US10056139B2 Managing threshold voltage shift in nonvolatile memory Physics 1 Active
US9230666B2 Drain select gate voltage management Physics 0 Active
US10649656B2 Techniques to update a trim parameter in non-volatile memory Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.