Gas-controlled bonding platform for edge defect reduction during wafer bonding
US10056272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/37001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.