Wei Lin
36Patents
5h-index
30Co-inventors
65Inventor score
Filing activity: May 29, 2012 → Jan 13, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9620481B2 | Substrate bonding with diffusion barrier structures | Electricity | 197 | Active |
| US9064937B2 | Substrate bonding with diffusion barrier structures | Electricity | 23 | Active |
| US9466538B1 | Method to achieve ultra-high chip-to-chip alignment accuracy for wafer-to-wafer bonding process | Electricity | 9 | Active |
| US9054109B2 | Corrosion/etching protection in integration circuit fabrications | Electricity | 7 | Active |
| US9028628B2 | Wafer-to-wafer oxide fusion bonding | Electricity | 7 | Active |
| US9922851B2 | Gas-controlled bonding platform for edge defect reduction during wafer bonding | Electricity | 5 | Active |
| US9059039B2 | Reducing wafer bonding misalignment by varying thermal treatment prior to bonding | Electricity | 5 | Active |
| US9401303B2 | Handler wafer removal by use of sacrificial inert layer | Electricity | 4 | Active |
| US9806032B1 | Integrated circuit structure with refractory metal alignment marker and methods of forming same | Electricity | 4 | Active |
| US9263366B2 | Liquid cooling of semiconductor chips utilizing small scale structures | Electricity | 4 | Active |
| US9058974B2 | Distorting donor wafer to corresponding distortion of host wafer | Emerging Cross-Sectional Technologies | 3 | Active |
| US10157757B2 | Gas-controlled bonding platform for edge defect reduction during wafer bonding | Electricity | 3 | Active |
| US9536853B2 | Semiconductor device including built-in crack-arresting film structure | Emerging Cross-Sectional Technologies | 3 | Active |
| US9263389B2 | Enhancing barrier in air gap technology | Electricity | 3 | Active |
| US10056272B2 | Gas-controlled bonding platform for edge defect reduction during wafer bonding | Electricity | 2 | Active |
| US10047264B2 | Polymer composite thermal interface material with high thermal conductivity | Chemistry; Metallurgy | 1 | Active |
| US11586314B1 | Border touch module | Physics | 1 | Active |
| US10170447B2 | Advanced chip to wafer stacking | Electricity | 1 | Active |
| US9059333B1 | Facilitating chip dicing for metal-metal bonding and hybrid wafer bonding | Electricity | 1 | Active |
| US9881896B2 | Advanced chip to wafer stacking | Electricity | 1 | Active |
| US10211178B2 | Semiconductor device including built-in crack-arresting film structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US9640514B1 | Wafer bonding using boron and nitrogen based bonding stack | Electricity | 0 | Active |
| US9142488B2 | Manganese oxide hard mask for etching dielectric materials | Emerging Cross-Sectional Technologies | 0 | Active |
| US10276500B2 | Enhancing barrier in air gap technology | Electricity | 0 | Active |
| US11829546B2 | Border touch module | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.