Semiconductor device

US10056365B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Daniel Kueck · Villach, AT
• Rudolf Elpelt · Erlangen, DE

Key dates

• Filing date: Feb 23, 2015
• Grant date: Aug 21, 2018
• Expiry date: Feb 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor device incudes a cell region and a contact region, the cell region including a functional unit including a gate electrode, a source and a drain electrode, and the contact region including a gate pad. The gate electrode, the gate pad and the source electrode are disposed on a first main surface of a semiconductor substrate, and the drain electrode is disposed on a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface. A shielding member is disposed between the gate pad and the drain electrode, the shielding member being electrically connected to the source electrode.