Daniel Kueck
16Patents
3h-index
25Co-inventors
56Inventor score
Filing activity: Jun 29, 2012 → Jul 14, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9577073B2 | Method of forming a silicon-carbide device with a shielded gate | Electricity | 17 | Active |
| US10211306B2 | Semiconductor device with diode region and trench gate structure | Electricity | 14 | Active |
| US10332876B2 | Method of forming compound semiconductor body | Electricity | 12 | Active |
| US9923066B2 | Wide bandgap semiconductor device | Electricity | 3 | Active |
| US9029974B2 | Semiconductor device, junction field effect transistor and vertical field effect transistor | Electricity | 3 | Active |
| US8994078B2 | Semiconductor device | Electricity | 3 | Active |
| US10217636B2 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Electricity | 2 | Active |
| US9960230B2 | Silicon-carbide transistor device with a shielded gate | Electricity | 1 | Active |
| US10700182B2 | Semiconductor device with transistor cells and a drift structure and method of manufacturing | Electricity | 0 | Active |
| US9543414B2 | Method of forming a silicon-carbide device with a shielded gate | General | 0 | Revoked |
| US10553685B2 | SiC semiconductor device with offset in trench bottom | Electricity | 0 | Active |
| US10056365B2 | Semiconductor device | Electricity | 0 | Active |
| US9934972B2 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Electricity | 0 | Active |
| US11626477B2 | Silicon carbide field-effect transistor including shielding areas | Electricity | 0 | Active |
| US11101343B2 | Silicon carbide field-effect transistor including shielding areas | Electricity | 0 | Active |
| US9923053B2 | Silicon-carbide transistor device with a shielded gate | General | 0 | Revoked |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.