Switching device
US10056374B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 21, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Aug 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A switching device may be provided with: a semiconductor substrate; a trench provided in an upper surface of the semiconductor substrate; a gate insulating layer covering an inner surface of the trench; and a gate electrode located in the trench. The semiconductor substrate includes: a first semiconductor region being in contact with the gate insulating layer; a body region being in contact with the gate insulating layer under the first semiconductor region; a second semiconductor region being in contact with the gate insulating layer under the body region; a bottom region being in contact with the gate insulating layer at a bottom surface of the trench; and a connection region being in contact with the gate insulating layer at a lateral surface of the trench and connecting the body region and the bottom region. The connection region is thicker than the bottom region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.