Inventor · Amuru, UG

Yasushi Urakami

35Patents
4h-index
36Co-inventors
63Inventor score

Filing activity: Oct 27, 2000 → Apr 7, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6495294B1 Method for manufacturing semiconductor substrate having an epitaxial film in the trench Electricity 46 Expired
US6495883B2 Trench gate type semiconductor device and method of manufacturing Electricity 38 Expired
US6406982B2 Method of improving epitaxially-filled trench by smoothing trench prior to filling Electricity 15 Expired
US7564095B2 Semiconductor device and method for manufacturing the same Electricity 5 Active
US10121862B2 Switching device and method of manufacturing the same Electricity 4 Active
US10243035B2 Method of manufacturing switching element Electricity 3 Active
US10056374B2 Switching device Electricity 2 Active
US10170470B2 Switching device Electricity 2 Active
US7063751B2 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners Electricity 2 Expired
US6642577B2 Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same Electricity 2 Expired
US7838995B2 Semiconductor device having p-n column portion Electricity 1 Active
US9048102B2 SiC single crystal, SiC wafer, and semiconductor device Electricity 1 Active
US8936682B2 Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects Electricity 1 Active
US9166008B2 SiC single crystal, SiC wafer, and semiconductor device Electricity 1 Active
US10985241B2 Semiconductor device and production method thereof Electricity 0 Active
US9534317B2 Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal Emerging Cross-Sectional Technologies 0 Active
US10263071B2 Method of manufacturing semiconductor device Electricity 0 Active
US10326015B2 Switching element and method of manufacturing the same Electricity 0 Active
US10522627B2 Semiconductor device Electricity 0 Active
US10204980B2 Semiconductor device and manufacturing method of the same Electricity 0 Active
US10125435B2 SiC single crystal, SiC wafer, SiC substrate, and SiC device Chemistry; Metallurgy 0 Active
US11004765B2 Field-effect transistor with a heat absorber in contact with a surface of the gate electrode on its back side Electricity 0 Active
US10236338B2 SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method Chemistry; Metallurgy 0 Active
US9145622B2 Manufacturing method of silicon carbide single crystal Chemistry; Metallurgy 0 Active
US11393902B2 Semiconductor device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.