Front side illuminated image sensor device structure and method for forming the same
US10056427B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | May 31, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Jun 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An FSI image sensor device structure is provided. The FSI image sensor device structure includes a substrate and a barrier structure formed in the substrate. The barrier structure includes a plurality of protrusion portions and a plurality of pillar portions. Each of the protrusion portions has a first height, and each of the pillar portions has a second height that is greater than the first height. The FSI image sensor device structure includes a pixel region formed over the protrusion portions and a storage region formed over the protrusion portions, wherein the pillar portions surround the pixel region.
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