Ming-Chi Wu
26Patents
4h-index
25Co-inventors
63Inventor score
Filing activity: Feb 12, 1988 → May 18, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4878117A | Video signal mixing unit for simultaneously displaying video signals having different picture aspect ratios and resolutions | Physics | 53 | Expired |
| US6137469A | Computer-TV video converting apparatus | Electricity | 22 | Expired |
| US9985072B1 | CMOS image sensor with dual damascene grid design having absorption enhancement structure | Electricity | 11 | Active |
| US10553733B2 | QE approach by double-side, multi absorption structure | Electricity | 7 | Active |
| US10510910B2 | Image sensor with an absorption enhancement semiconductor layer | Electricity | 3 | Active |
| US10438980B2 | Image sensor with a high absorption layer | Electricity | 2 | Active |
| US10879406B2 | QE approach by double-side, multi absorption structure | Electricity | 2 | Active |
| US10211244B2 | Image sensor device with reflective structure and method for forming the same | Electricity | 2 | Active |
| US10153319B2 | CMOS image sensor with dual damascene grid design having absorption enhancement structure | Electricity | 2 | Active |
| US10861988B2 | Image sensor with an absorption enhancement semiconductor layer | Electricity | 1 | Active |
| US9502556B2 | Integrated fabrication of semiconductor devices | Electricity | 1 | Active |
| US9984918B2 | Semiconductor structure and manufacturing method thereof | Electricity | 1 | Active |
| US10861989B2 | Image sensor with an absorption enhancement semiconductor layer | Electricity | 1 | Active |
| US10784150B2 | Semiconductor structure and manufacturing method thereof | Electricity | 1 | Active |
| US10868053B2 | Image sensor with a high absorption layer | Electricity | 1 | Active |
| US11393937B2 | QE approach by double-side, multi absorption structure | Electricity | 1 | Active |
| US10056427B1 | Front side illuminated image sensor device structure and method for forming the same | Electricity | 0 | Active |
| US11302734B2 | Deep trench isolation structures resistant to cracking | Electricity | 0 | Active |
| US10734427B2 | Method for forming image sensor device | Electricity | 0 | Active |
| US11990493B2 | Image sensor device with reflective structure | Electricity | 0 | Active |
| US11830892B2 | Image sensor with a high absorption layer | Electricity | 0 | Active |
| US10707361B2 | QE approach by double-side, multi absorption structure | Electricity | 0 | Active |
| US10553628B2 | Image sensor with a high absorption layer | Electricity | 0 | Active |
| US10276427B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US11342372B2 | Image sensor device with reflective layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.