Fabrication of indium-doped silicon by the czochralski method

US10060045B2 · kind B2 · utility

Assignee

• Corner Star Limited · CN

Inventors

• Roberto Scala · Novara, IT
• Luigi Bonanno · Albino, IT
• Stephan Haringer · Meran - Merano, IT
• Armando Giannattasio · Novara, IT
• Valentino Moser · Novara, IT
• Jesse S. Appel · O'Fallon, US
• Martin Jeffrey Binns · Holden, US

Key dates

• Filing date: Dec 27, 2013
• Grant date: Aug 28, 2018
• Expiry date: Apr 24, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.