Patent · US Active

Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate

US10060047B2 · kind B2 · utility

0Cited by
3References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 24, 2014
Grant dateAug 28, 2018
Priority date—
Expiry dateOct 6, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8503
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.