Inventor · Ibaraki, JP

Yuichi Oshima

32Patents
7h-index
21Co-inventors
69Inventor score

Filing activity: Oct 21, 1999 → Apr 26, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6924159B2 Semiconductor substrate made of group III nitride, and process for manufacture thereof Electricity 56 Expired
US7196399B2 Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density Electricity 21 Expired
US6812051B2 Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure Electricity 16 Expired
US7189588B2 Group III nitride semiconductor substrate and its manufacturing method Electricity 13 Expired
US7829913B2 Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method Electricity 12 Active
US7118934B2 Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate Electricity 11 Expired
US7097920B2 Group III nitride based semiconductor substrate and process for manufacture thereof Emerging Cross-Sectional Technologies 8 Expired
US7791103B2 Group III nitride semiconductor substrate Electricity 6 Active
US7906412B2 Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate Electricity 3 Active
US7662488B2 Nitride-based semiconductor substrate and method of making the same Electricity 2 Active
US7271404B2 Group III-V nitride-based semiconductor substrate and method of making same Electricity 2 Expired
US7348278B2 Method of making nitride-based compound semiconductor crystal and substrate Electricity 2 Active
US6306966A Moisture curable composition Emerging Cross-Sectional Technologies 2 Expired
US8624356B2 Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate Electricity 1 Active
US7075111B2 Nitride semiconductor substrate and its production method Electricity 1 Expired
US8690636B2 Compound semiconductor substrate production method Emerging Cross-Sectional Technologies 1 Active
US8329650B2 Method of treating ischemic injury with follistatin-like 1 polypeptide Human Necessities 1 Active
US8829651B2 Nitride-based semiconductor substrate and semiconductor device Electricity 1 Active
US9246049B2 Nitride-based semiconductor substrate and semiconductor device Electricity 1 Active
US7728323B2 Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting device Electricity 1 Active
US11804519B2 Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure Electricity 0 Active
US8715413B2 Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate Chemistry; Metallurgy 0 Active
US10060047B2 Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate Electricity 0 Active
US8975230B2 Method of treating ischemic injury with follistatin-like 1 polypeptide Human Necessities 0 Active
US8786052B2 Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.