SRAM with multiple power domains
US10062431B2 · kind B2 · utility
1Cited by
13References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Nov 7, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.