Semiconductor devices and methods of manufacturing the same
US10062609B2 · kind B2 · utility
2Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Dec 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.