Inventor · Seojong-myeon, KR

Jong-Min Baek

51Patents
4h-index
82Co-inventors
65Inventor score

Filing activity: Dec 3, 2008 → Dec 13, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9281277B2 Methods of forming wiring structures Electricity 469 Active
US8466052B2 Method of fabricating semiconductor device having buried wiring Electricity 39 Active
US10475739B2 Semiconductor device Electricity 4 Active
US10461027B2 Semiconductor device including via plug and method of forming the same Electricity 4 Active
US10008407B2 Methods of manufacturing semiconductor devices including conductive structures Electricity 4 Active
US10128148B2 Methods for fabricating semiconductor devices including surface treatment processes Electricity 3 Active
US9812450B2 Semiconductor devices and methods of manufacturing the same Electricity 3 Active
US9653400B2 Semiconductor device and method of manufacturing the same Electricity 2 Active
US9812353B2 Semiconductor device and method of manufacturing the same Electricity 2 Active
US8889543B2 Method of fabricating semiconductor device Electricity 2 Active
US11037872B2 Semiconductor devices and methods of manufacturing the same Electricity 2 Active
US9728604B2 Semiconductor devices Electricity 2 Active
US10199263B2 Semiconductor devices and methods of manufacturing the same Electricity 2 Active
US10062609B2 Semiconductor devices and methods of manufacturing the same Electricity 2 Active
US7928498B2 Gate structures in semiconductor devices Electricity 1 Active
US10700164B2 Semiconductor devices Electricity 1 Active
US10825766B2 Semiconductor device with multi-layered wiring and method for fabricating the same Electricity 1 Active
US8404576B2 Methods of forming a gate structure Electricity 1 Active
US10867923B2 Semiconductor device Electricity 1 Active
US10217820B2 Semiconductor devices Electricity 1 Active
US10847454B2 Semiconductor devices Electricity 1 Active
US10804145B2 Methods of fabricating semiconductor devices Electricity 1 Active
US7989333B2 Methods of forming integrated circuit devices having anisotropically-oxidized nitride layers Electricity 1 Active
US10304734B2 Semiconductor devices and methods of manufacturing the same Electricity 0 Active
US10872784B2 Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.