High voltage semiconductor devices and methods of making the devices
US10062749B2 · kind B2 · utility
2Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2014 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Dec 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.