Larry Rowland
18Patents
6h-index
30Co-inventors
62Inventor score
Filing activity: Dec 27, 2002 → Jun 12, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7078731B2 | Gallium nitride crystals and wafers and method of making | Chemistry; Metallurgy | 208 | Expired |
| US7098487B2 | Gallium nitride crystal and method of making same | Chemistry; Metallurgy | 85 | Expired |
| US7175704B2 | Method for reducing defect concentrations in crystals | Emerging Cross-Sectional Technologies | 82 | Expired |
| US7786503B2 | Gallium nitride crystals and wafers and method of making | Chemistry; Metallurgy | 9 | Active |
| US7482674B1 | Crystalline III-V nitride films on refractory metal substrates | Electricity | 7 | Active |
| US7595241B2 | Method for fabricating silicon carbide vertical MOSFET devices | Electricity | 6 | Active |
| US7859008B2 | Crystalline composition, wafer, device, and associated method | Emerging Cross-Sectional Technologies | 6 | Active |
| US7638815B2 | Crystalline composition, wafer, and semi-conductor structure | Emerging Cross-Sectional Technologies | 4 | Active |
| US7655514B2 | Method of fabricating a MESFET with a sloped MESA structure | Electricity | 4 | Active |
| US7391058B2 | Semiconductor devices and methods of making same | Electricity | 3 | Expired |
| US9035395B2 | Semiconductor devices comprising getter layers and methods of making and using the same | Electricity | 3 | Active |
| US7345309B2 | SiC metal semiconductor field-effect transistor | Electricity | 2 | Expired |
| US10062749B2 | High voltage semiconductor devices and methods of making the devices | Electricity | 2 | Active |
| US7482634B2 | Monolithic array for solid state ultraviolet light emitters | Electricity | 1 | Expired |
| US8994118B2 | Semiconductor devices comprising getter layers and methods of making and using the same | Electricity | 1 | Active |
| US8216370B2 | Method for reducing defect concentration in crystals | Emerging Cross-Sectional Technologies | 0 | Active |
| US9751770B2 | Seeded silicon carbide for devices and panels | Physics | 0 | Active |
| US8357945B2 | Gallium nitride crystal and method of making same | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.