Semiconductor devices and methods of fabricating the same
US10062754B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate provided with an active pattern; a gate structure provided on the active pattern to cross the active pattern; and source/drain regions provided at both sides of the gate structure. The active pattern includes a first region below the gate structure and second regions at both sides of the gate structure. A top surface of each of the second regions is lower than that of the first region. The source/drain regions are provided on the second regions, respectively, and each of the source/drain regions covers partially both sidewalls of each of the second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.