Byeongchan Lee
18Patents
6h-index
34Co-inventors
58Inventor score
Filing activity: Nov 3, 2010 → Mar 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10079305B2 | Semiconductor device and method of fabricating the same | Electricity | 19 | Active |
| US8497533B2 | Three-dimensional semiconductor memory device | Electricity | 11 | Active |
| US8268687B2 | Three-dimensional semiconductor memory device and method of fabricating the same | Electricity | 10 | Active |
| US8835995B2 | Semiconductor devices including silicide regions and methods of fabricating the same | Electricity | 9 | Active |
| US9691902B2 | Semiconductor device | Electricity | 6 | Active |
| US9466721B1 | Semiconductor device having stressor and method of fabricating the same | Electricity | 6 | Active |
| US8883651B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 6 | Active |
| US9412731B2 | Semiconductor device | Electricity | 4 | Active |
| US9530870B2 | Methods of fabricating a semiconductor device | Electricity | 2 | Active |
| US11004976B2 | Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same | Electricity | 1 | Active |
| US10062754B2 | Semiconductor devices and methods of fabricating the same | Electricity | 1 | Active |
| US9373703B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US10170622B2 | Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same | Electricity | 1 | Active |
| US10756211B2 | Semiconductor devices including source/drain regions having multiple epitaxial patterns | Electricity | 0 | Active |
| US10263109B2 | Semiconductor devices including silicide regions and methods of fabricating the same | Electricity | 0 | Active |
| US9853160B2 | Semiconductor devices and methods of fabricating the same | Electricity | 0 | Active |
| US10319859B2 | Semiconductor devices and methods of fabricating the same | Electricity | 0 | Active |
| US9553190B2 | Semiconductor devices including source/drain regions having multiple epitaxial patterns | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.