GaN-based power electronic device and method for manufacturing the same
US10062775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.