Wenwu Wang
27Patents
3h-index
47Co-inventors
59Inventor score
Filing activity: Jun 12, 2008 → Nov 29, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD828351S1 | Wearable device | General | 11 | Active |
| US7821083B2 | Semiconductor device and method for manufacturing the same | Electricity | 3 | Active |
| US8410541B2 | CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same | Electricity | 3 | Active |
| US8507991B2 | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 3 | Active |
| US8410555B2 | CMOSFET device with controlled threshold voltage and method of fabricating the same | Electricity | 3 | Active |
| US8703558B2 | Graphene device and method for manufacturing the same | Electricity | 3 | Active |
| US8222099B2 | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Active |
| US8749067B2 | Semiconductor device and method for forming the same | Electricity | 2 | Active |
| US10062775B2 | GaN-based power electronic device and method for manufacturing the same | Electricity | 2 | Active |
| US8685851B2 | MOS device with memory function and manufacturing method thereof | Electricity | 2 | Active |
| US8633098B2 | Method of manufacturing a semiconductor device | Electricity | 1 | Active |
| US8415222B2 | Semiconductor device and method for manufacturing the same | Electricity | 1 | Active |
| US8329566B2 | Method of manufacturing a high-performance semiconductor device | Electricity | 1 | Active |
| US8563415B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US10991877B2 | Multi-state memory and method for manufacturing the same | Physics | 0 | Active |
| US8802518B2 | Semiconducor device and method for manufacturing the same | Electricity | 0 | Active |
| US10312345B2 | Transistor having a gate with a variable work function and method for manufacturing the same | Electricity | 0 | Active |
| US9831089B2 | Method for adjusting effective work function of metal gate | Electricity | 0 | Active |
| US11759892B2 | Additive manufacturing device for cast-rolling with laser cladding | Emerging Cross-Sectional Technologies | 0 | Active |
| US11476328B2 | Stacked nanowire or nanosheet gate-all-around device and method for manufacturing the same | Performing Operations; Transporting | 0 | Active |
| US8030717B2 | Semiconductor device | Electricity | 0 | Active |
| US8921171B2 | Method for forming gate structure, method for forming semiconductor device, and semiconductor device | Electricity | 0 | Active |
| US11810986B2 | Method for integrating surface-electrode ion trap and silicon photoelectronic device, integrated structure, and three-dimensional structure | Electricity | 0 | Active |
| US11024708B1 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US10276366B2 | Low interface state device and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.