Semiconductor on insulator devices containing permanent charge
US10062788B2 · kind B2 · utility
0Cited by
24References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2009 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Apr 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A lateral SOI device may include a semiconductor channel region connected to a drain region by a drift region. An insulation region on the drift layer is positioned between the channel region and the drain region. Permanent charges may be embedded in the insulation region sufficient to cause inversion in the insulation region. The semiconductor layer also overlies a global insulation layer, and permanent charges are preferably embedded in at least selected areas of this insulation layer too.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.