MaxPower Semiconductor Inc.
89Patents
89Active
89Granted
50Portfolio score
Filing activity: Sep 25, 2007 → Aug 5, 2021 · 26 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8076719B2 | Semiconductor device structures and related processes | Electricity | 116 | Active |
| US8704295B1 | Schottky and MOSFET+Schottky structures, devices, and methods | Electricity | 46 | Active |
| US7843004B2 | Power MOSFET with recessed field plate | Electricity | 43 | Active |
| US7964913B2 | Power MOS transistor incorporating fixed charges that balance the charge in the drift region | Electricity | 40 | Active |
| US8319278B1 | Power device structures and methods using empty space zones | Electricity | 37 | Active |
| US9093522B1 | Vertical power MOSFET with planar channel and vertical field plate | Electricity | 29 | Active |
| US7910439B2 | Super self-aligned trench MOSFET devices, methods, and systems | Electricity | 17 | Active |
| US8390060B2 | Power semiconductor devices, structures, and related methods | Electricity | 14 | Active |
| US8354711B2 | Power MOSFET and its edge termination | Electricity | 12 | Active |
| US7989293B2 | Trench device structure and fabrication | Electricity | 9 | Active |
| US7923804B2 | Edge termination with improved breakdown voltage | Electricity | 8 | Active |
| US8680607B2 | Trench gated power device with multiple trench width and its fabrication process | Electricity | 8 | Active |
| US8564057B1 | Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield | Electricity | 7 | Active |
| US8420483B2 | Method of manufacture for a semiconductor device | Electricity | 7 | Active |
| US7960783B2 | Devices containing permanent charge | Electricity | 7 | Active |
| US8058682B2 | Semiconductor device | Electricity | 6 | Active |
| US9024379B2 | Trench transistors and methods with low-voltage-drop shunt to body diode | Electricity | 6 | Active |
| US9224855B2 | Trench gated power device with multiple trench width and its fabrication process | Electricity | 6 | Active |
| US8304329B2 | Power device structures and methods | Electricity | 6 | Active |
| US8344451B2 | Semiconductor device | Electricity | 6 | Active |
| US8466025B2 | Semiconductor device structures and related processes | Electricity | 5 | Active |
| US8310001B2 | MOSFET switch with embedded electrostatic charge | Electricity | 5 | Active |
| US8581341B2 | Power MOSFET with embedded recessed field plate and methods of fabrication | Electricity | 5 | Active |
| US9852910B2 | Vertical power transistor with dual buffer regions | Electricity | 5 | Active |
| US9461127B2 | Vertical power MOSFET having planar channel and its method of fabrication | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.