Method of producing III nitride semiconductor light-emitting device and III nitride semiconductor light-emitting device
US10062806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2015 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Dec 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
We propose a method of producing a III nitride semiconductor light-emitting device including a p-type semiconductor layer, in which the p-type semiconductor layer is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer made of AlyGa1-yN (b<y≤1) on a light emitting layer; and a p-type contact formation step for forming a p-type contact layer which is AlxGa1-xN (0≤x≤0.1), directly on the electron blocking layer, and in which the electron blocking layer formation step is performed using a carrier gas containing hydrogen as a main component, and the p-type contact formation step is performed using a carrier gas containing nitrogen as a main component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.